Samsung 990 EVO Plus 4TB M.2 NVMe Gen5 Internal SSD Up to 7250 MB/s Read Speed :
Overview :
The Samsung 990 EVO Plus 4TB M.2 NVMe Gen5 Internal SSD Up to 7250 MB/s Read Speed is designed for users who need both maximum speed and massive capacity. Delivering exceptional sequential performance of up to 7,250 MB/s read and up to 6,300 MB/s write, Samsung 990 EVO Plus 4TB M.2 NVMe Gen5 Internal SSD Up to 7250 MB/s Read Speed offers incredible responsiveness for demanding workloads such as 4K/8K video editing, high-end gaming, 3D rendering, and large data management.
Built with Samsung’s advanced V-NAND TLC flash memory and powered by a highly efficient controller, Samsung 990 EVO Plus 4TB M.2 NVMe Gen5 Internal SSD Up to 7250 MB/s Read Speed ensures better reliability, longer lifespan, and consistent output. Its 4TB capacity provides plenty of storage for large applications, game libraries, creative projects, and OS installations — all within a compact M.2 2280 form factor suitable for desktops and laptops.
The 990 EVO Plus supports both PCIe 4.0 ×4 and PCIe 5.0 ×2 interfaces, delivering future-ready compatibility and maximizing performance on modern systems. Whether you’re upgrading a workstation or building a premium gaming rig, Samsung 990 EVO Plus 4TB M.2 NVMe Gen5 Internal SSD Up to 7250 MB/s Read Speed provides the top-tier speed, efficiency, and storage needed for next-level computing.
Key Features :
Up to 7,250 MB/s sequential read speed for ultra-fast loading and transfers.
Up to 6,300 MB/s sequential write speed for smooth heavy workloads.
High-capacity 4TB storage ideal for content creation, gaming, and professional use.
PCIe 4.0 ×4 / PCIe 5.0 ×2 compatibility for maximum performance and futureproofing.
Samsung V-NAND TLC flash offering durability and reliable long-term performance.
High random IOPS for fast multitasking, OS responsiveness, and app loading.
Thermally optimized efficiency for cooler and more stable operation.
Perfect for intensive tasks like video editing, large file transfers, AI workloads, and high-end gaming.
Specification Table :
| Brand & Model | Samsung 990 EVO Plus 4TB |
| Capacity | 4TB |
| Form Factor | M.2 2280 |
| Interface | PCIe 4.0 ×4 / PCIe 5.0 ×2 |
| Protocol | NVMe 2.0 |
| Sequential Read Speed | Up to 7,250 MB/s |
| Sequential Write Speed | Up to 6,300 MB/s |
| Random Read IOPS | Up to ~1,050,000 IOPS |
| Random Write IOPS | Up to ~1,400,000 IOPS |
| NAND Type | Samsung V-NAND TLC |
| Controller | Samsung In-House NVMe Controller |
| Cache / Buffer | Host Memory Buffer (No DRAM) |
| TBW (Endurance) | 2,400 TB |
| Active Power Consumption (Read) | ~5.5 W |
| Active Power Consumption (Write) | ~4.8 W |
| Idle Power | ~60 mW |
| Sleep Power Mode | ~5 mW |
| Operating Temperature | 0°C to 70°C |
| Shock Resistance | 1500G |
| Security Features | AES 256-bit Encryption, TCG Opal, eDrive |
| Supported Technologies | TRIM, S.M.A.R.T., Garbage Collection, Device Sleep |
| Ideal For | High-end gaming, content creation, video editing, workstation use, OS/app drive |
| Warranty | Five Year Limited Warranty |
