Samsung 990 EVO Plus 2TB
Samsung 990 EVO Plus 2TB M.2 NVMe Gen5 Internal SSD Up to 7250 MB/s Read Speed
39,999 Original price was: ₹39,999.22,339Current price is: ₹22,339. (Inclusive of GST) Add to cart
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Samsung 990 EVO Plus 2TB M.2 NVMe Gen5 Internal SSD Up to 7250 MB/s Read Speed

Original price was: ₹39,999.Current price is: ₹22,339. (Inclusive of GST)

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Samsung 990 EVO Plus 2TB M.2 NVMe Gen5 Internal SSD Up to 7250 MB/s Read Speed :

Overview :

The Samsung 990 EVO Plus 2TB M.2 NVMe Gen5 Internal SSD Up to 7250 MB/s Read Speed delivers next-level storage performance designed for power users, gamers, professionals, and creators. With blistering up to 7,250 MB/s sequential read and up to 6,300 MB/s write speeds, Samsung 990 EVO Plus 2TB M.2 NVMe Gen5 Internal SSD Up to 7250 MB/s Read Speed offers exceptional responsiveness, faster boot times, near-instant application loading, and superior overall system performance.

Built on Samsung’s advanced V-NAND TLC technology and powered by an efficient NVMe 2.0 controller, the Samsung 990 EVO Plus 2TB M.2 NVMe Gen5 Internal SSD Up to 7250 MB/s Read Speed ensures both high durability and reliable long-term performance. Its compatibility with both PCIe 4.0 x4 and PCIe 5.0 x2 makes it ideal for modern and future-ready systems. Whether you’re editing high-resolution video, running heavy applications, or building a fast gaming PC, Samsung 990 EVO Plus 2TB M.2 NVMe Gen5 Internal SSD Up to 7250 MB/s Read Speed provides the power and speed you need.

Key Features :

  • Ultra-Fast Performance
    Up to 7,250 MB/s read and 6,300 MB/s write speeds for rapid loading, transferring, and multitasking.

  • Large 2TB Capacity
    Store games, applications, media projects, and more without worrying about space.

  • Next-Gen Compatibility
    Supports PCIe 4.0 x4 and PCIe 5.0 x2, offering flexibility across newer systems.

  • Advanced V-NAND TLC Flash
    Ensures endurance, stability, and top-tier data handling performance.

  • Host Memory Buffer (HMB)
    Enhances responsiveness even without onboard DRAM.

  • High Random I/O Performance
    Excellent IOPS ideal for heavy workloads, gaming, and content creation.

  • Power Efficient & Thermally Optimized
    Designed to stay cool and consume less power during high-speed operations.

  • Perfect for High-End Tasks
    Gaming, 4K/8K content editing, professional workloads, and high-speed OS booting.

Specification Table :

BrandSamsung
Model990 EVO Plus
Capacity2TB
Form FactorM.2 2280
InterfacePCIe 4.0 ×4 / PCIe 5.0 ×2
ProtocolNVMe 2.0
Sequential Read SpeedUp to 7,250 MB/s
Sequential Write SpeedUp to 6,300 MB/s
Random Read IOPSUp to ~1,000,000 IOPS
Random Write IOPSUp to ~1,350,000 IOPS
NAND TypeV-NAND TLC
ControllerSamsung In-house Controller
Cache / BufferHost Memory Buffer (HMB), No DRAM
TBW (Endurance)1,200 TBW
Power (Active)~4.6W read / ~4.2W write
Idle Power~60 mW
Sleep Mode~5 mW
Operating Temperature0°C to 70°C
Shock Resistance1500G
SecurityAES 256-bit Encryption, TCG Opal, eDrive
Supported FeaturesTRIM, S.M.A.R.T., Garbage Collection, Device Sleep
Ideal ForGaming, content creation, video editing, OS boot drive, heavy workloads
Warranty5 Years

Additional information

Weight1 kg
Brand

Samsung

Capacity

2 TB

Form Factor

M.2

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