Samsung 9100 PRO 4TB M.2 NVMe Gen5 Internal SSD Up to 14700 MB/s Read Speed :
Overview :
The Samsung 9100 PRO 4TB M.2 NVMe Gen5 Internal SSD Up to 14700 MB/s Read Speed delivers exceptional next-generation PCIe 5.0 performance with ultra-fast sequential read speeds up to 14,700 MB/s. Built for high-end gaming, AI workflows, 4K/8K content creation, and data-intensive professional tasks, Samsung 9100 PRO 4TB M.2 NVMe Gen5 Internal SSD Up to 14700 MB/s Read Speed combines massive capacity with cutting-edge controller technology, improved thermal efficiency, and superior endurance. Whether you’re upgrading a powerful workstation or a high-performance gaming PC, the Samsung 9100 PRO 4TB M.2 NVMe Gen5 Internal SSD Up to 14700 MB/s Read Speed ensures instant responsiveness, lightning-fast load times, and unmatched productivity.
Key Features :
Extreme PCIe Gen5 Performance
Experience up to 14,700 MB/s read and 13,400 MB/s write, enabling ultra-fast file transfers, game loads, and workflow acceleration.Large 4TB Storage Capacity
Easily store massive games, 4K/8K videos, AI datasets, raw footage, and large professional project files.Advanced Controller & V-NAND Flash
Built with a high-performance Samsung controller and high-grade V-NAND TLC for consistent, reliable speed and endurance.Enhanced Thermal Management
Engineered to minimize throttling during sustained workloads through optimized power efficiency and smart heat control.Exceptional Random IOPS Performance
High random read/write capability for fast application loading, multitasking, and database operations.Professional-Grade Reliability
Designed for long-term durability, heavy workload support, and stable performance under intense usage.M.2 2280 Compatibility
Installs easily in modern desktops and high-end motherboards supporting PCIe 5.0 ×4 NVMe.
Specification Table :
| Brand | Samsung |
| Model | 9100 PRO |
| Storage Capacity | 4TB |
| Form Factor | M.2 2280 |
| Interface | PCIe 5.0 ×4, NVMe 2.0 |
| Sequential Read Speed | Up to 14,700 MB/s |
| Sequential Write Speed | Up to 13,400 MB/s |
| Random Read IOPS | Up to 2,200,000 IOPS |
| Random Write IOPS | Up to 2,600,000 IOPS |
| NAND Type | Samsung V-NAND TLC |
| Controller | Samsung Custom Gen5 NVMe Controller |
| DRAM Cache | 4GB LPDDR4X (approx.) |
| Power Consumption (Active) | ~9W Read / ~8W Write (approx.) |
| Idle Power | Low-power support |
| Endurance (TBW) | High workload endurance rating |
| MTBF | ~1.5 Million Hours |
| Operating Temperature | 0°C to 70°C |
| Shock Resistance | 1500G |
| Ideal For | AI workloads, 4K/8K editing, gaming, workstation builds, large data processing |
| Warranty | 5 Years |
